Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite, SW Da Silva… - Journal of applied …, 1996 - pubs.aip.org
Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by means of
molecular beam epitaxy. First order Raman spectra are taken from these layers at various …
molecular beam epitaxy. First order Raman spectra are taken from these layers at various …
Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite… - Journal of Applied …, 1996 - ui.adsabs.harvard.edu
Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by means of
molecular beam epitaxy. First order Raman spectra are taken from these layers at various …
molecular beam epitaxy. First order Raman spectra are taken from these layers at various …
[引用][C] Comparative raman studies of cubic and hexagonal gan epitaxial layers
A Tabata, R Enderlein, JR Leite, SW Silva… - Journal of Applied …, 1996 - repositorio.usp.br
ReP USP - Detalhe do registro: Comparative raman studies of cubic and hexagonal gan
epitaxial layers Home About USP Schools USP Schools Escola de Artes, Ciências e …
epitaxial layers Home About USP Schools USP Schools Escola de Artes, Ciências e …
Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite, SW da Silva… - Journal of Applied …, 1996 - cir.nii.ac.jp
抄録< jats: p> Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by
means of molecular beam epitaxy. First order Raman spectra are taken from these layers at …
means of molecular beam epitaxy. First order Raman spectra are taken from these layers at …
[PDF][PDF] Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite, SW da Silva… - 1996 - researchgate.net
The binary nitrides of In, Ga, and Al form continuous alloy systems whose direct band gaps
range from 1.9 to 6.2 eV. This allows the creation of blue light emitting diodes, as it has been …
range from 1.9 to 6.2 eV. This allows the creation of blue light emitting diodes, as it has been …
Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
A Tabata, R Enderlein, JR Leite, SW da Silva… - Journal of Applied …, 1996 - pubs.aip.org
The binary nitrides of In, Ga, and Al form continuous alloy systems whose direct band gaps
range from 1.9 to 6.2 eV. This allows the creation of blue light emitting diodes, as it has been …
range from 1.9 to 6.2 eV. This allows the creation of blue light emitting diodes, as it has been …