Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

L Chen, D Ando, Y Sutou, S Yokogawa, J Koike - Applied Surface Science, 2019 - Elsevier
This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO
2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in …
被引用次数：20 相关文章

Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

L Chen, D Ando, Y Sutou… - Applied Surface …, 2019 - ui.adsabs.harvard.edu
This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO
2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in …

[引用][C] Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

L Chen, D Ando, Y Sutou, S Yokogawa… - Applied Surface Science, 2019 - cir.nii.ac.jp
Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface
status | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …

Liner-and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

L Chen, D Ando, Y Sutou… - Applied Surface …, 2019 - tohoku.elsevierpure.com
This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO
2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in …