Heat of crystallization and melting point of amorphous silicon

EP Donovan, F Spaepen, D Turnbull, JM Poate… - Applied Physics …, 1983 - pubs.aip.org
Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …
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Heat of crystallization and melting point of amorphous silicon

EP Donovan, F Spaepen, D Turnbull… - Applied Physics …, 1983 - ui.adsabs.harvard.edu
Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …

Heat of crystallization and melting point of amorphous silicon

EP Donovan, F Spaepen, D Turnbull, JM Poate… - Applied Physics …, 1983 - pubs.aip.org
Thin layers of amorphous silicon (a‐Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …

[引用][C] Heat of crystallization and melting point of amorphous silicon

EP Donovan, F Spaepen, D Turnbull, JM Poate… - Applied Physics …, 1983 - cir.nii.ac.jp