Enhanced grain-boundary conduction in polycrystalline Ce0. 8Gd0. 2O1. 9 by zinc oxide doping: Scavenging of resistive impurities

L Ge, R Li, S He, H Chen, L Guo - Journal of power sources, 2013 - Elsevier
ZnO doping can significantly diminish the deleterious effect caused by impurities on the
grain-boundary conduction of polycrystalline Ce0. 8Gd0. 2O1. 9 electrolyte. Analysis by field …
被引用次数：35 相关文章

[引用][C] Enhanced grain-boundary conduction in polycrystalline Ce0. 8Gd0. 2O1. 9 by zinc oxide doping: Scavenging of resistive impurities

LIN GE, R LI, S HE, HAN CHEN… - Journal of power …, 2013 - pascal-francis.inist.fr
Enhanced grain-boundary conduction in polycrystalline Ce0.8Gd0.2O1.9 by zinc oxide
doping: Scavenging of resistive impurities CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] Enhanced grain-boundary conduction in polycrystalline Ce0. 8Gd0. 2O1. 9 by zinc oxide doping: Scavenging of resistive impurities

L Ge, R Li, S He, H Chen, L Guo - Journal of Power Sources, 2013 - cir.nii.ac.jp
Enhanced grain-boundary conduction in polycrystalline Ce0.8Gd0.2O1.9 by zinc oxide doping:
Scavenging of resistive impurities | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …

Enhanced grain-boundary conduction in polycrystalline Ce0. 8Gd0. 2O1. 9 by zinc oxide doping: Scavenging of resistive impurities

L Ge, R Li, S He, H Chen, L Guo - Journal of Power Sources, 2013 - infona.pl
ZnO doping can significantly diminish the deleterious effect caused by impurities on the
grain-boundary conduction of polycrystalline Ce 0.8 Gd 0.2 O 1.9 electrolyte. Analysis by …