Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3
N Chittock, MFJ Vos, T Faraz, WMM Kessels… - Applied Physics …, 2020 - research.tue.nl
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
[PDF][PDF] Isotropic plasma atomic layer etching of Al
NJ Chittock, MFJ Vos, T Faraz, WMME Kessels… - Journal of Vacuum …, 2015 - pure.tue.nl
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3
NJ Chittock, MFJ Vos, T Faraz, WMM Kessels… - Applied Physics …, 2020 - pubs.aip.org
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3
NJ Chittock, MFJ Vos, T Faraz, WMME Kessels… - Applied Physics …, 2020 - cir.nii.ac.jp
抄録< jats: p> Nanofabrication techniques with atomic level precision are needed for
advancement to smaller technology nodes in the semiconductor industry. Thermal atomic …
advancement to smaller technology nodes in the semiconductor industry. Thermal atomic …
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3
NJ Chittock, MFJ Vos, T Faraz… - Applied Physics …, 2020 - ui.adsabs.harvard.edu
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
[引用][C] Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al (CH3) 3
N Chittock, MFJ Vos, T Faraz, WMM Kessels… - research.tue.nl
Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3
– Datasets — Eindhoven University of Technology research portal Skip to main navigation …
– Datasets — Eindhoven University of Technology research portal Skip to main navigation …
[PDF][PDF] Isotropic plasma atomic layer etching of Al
NJ Chittock, MFJ Vos, T Faraz, WMME Kessels… - Journal of Vacuum …, 2015 - pure.tue.nl
Nanofabrication techniques with atomic level precision are needed for advancement to
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …
smaller technology nodes in the semiconductor industry. Thermal atomic layer etching (ALE) …