Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction
C Hu - IEEE Transactions on Semiconductor Manufacturing, 2004 - ieeexplore.ieee.org
The authors present a comprehensive characterization method applied to the study of the
state-of-the-art 18-/spl mu/m CMOS process. Statistical characterization of gate CD reveals a …
state-of-the-art 18-/spl mu/m CMOS process. Statistical characterization of gate CD reveals a …
[引用][C] Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction
M ORSHANSKY - IEEE Trans. Semicond. Manuf., 2004 - cir.nii.ac.jp
Characterization of spatial intrafield gate CD variability, its impact on circuit performance,
and spatial mask-level correction | CiNii Research CiNii 国立情報学研究所 学術情報 …
and spatial mask-level correction | CiNii Research CiNii 国立情報学研究所 学術情報 …
[PDF][PDF] Characterization of Spatial Intrafield Gate CD Variability, Its Impact on Circuit Performance, and Spatial Mask-Level Correction
M Orshansky, L Milor, C Hu - IEEE TRANSACTIONS ON …, 2004 - scholar.archive.org
The authors present a comprehensive characteri-zation method applied to the study of the
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
Characterization of Spatial Intrafield Gate CD Variability, Its Impact on Circuit Performance, and Spatial Mask-Level Correction
M Orshansky, L Milor, CM Hu - IEEE Transactions on …, 2004 - scholar.nycu.edu.tw
The authors present a comprehensive characterization method applied to the study of the
state-of-the-art 18-μm CMOS process. Statistical characterization of gate CD reveals a large …
state-of-the-art 18-μm CMOS process. Statistical characterization of gate CD reveals a large …
[PDF][PDF] Characterization of Spatial Intrafield Gate CD Variability, Its Impact on Circuit Performance, and Spatial Mask-Level Correction
M Orshansky, L Milor, C Hu - IEEE TRANSACTIONS ON …, 2004 - Citeseer
The authors present a comprehensive characteri-zation method applied to the study of the
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
[PDF][PDF] Characterization of Spatial Intrafield Gate CD Variability, Its Impact on Circuit Performance, and Spatial Mask-Level Correction
M Orshansky, L Milor, C Hu - IEEE TRANSACTIONS ON …, 2004 - researchgate.net
The authors present a comprehensive characteri-zation method applied to the study of the
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
state-of-the-art 18-m CMOS process. Statistical characterization of gate CD reveals a large …
[引用][C] Characterization of spatial intrafield gate CD variability, its impact on circuit performance, and spatial mask-level correction
M ORSHANSKY, L MILOR… - IEEE transactions on …, 2004 - pascal-francis.inist.fr
Characterization of spatial intrafield gate CD variability, its impact on circuit performance,
and spatial mask-level correction CNRS Inist Pascal-Francis CNRS Pascal and Francis …
and spatial mask-level correction CNRS Inist Pascal-Francis CNRS Pascal and Francis …