[HTML][HTML] High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
Scientific reports, 2012 - nature.com
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific …, 2012 - pubmed.ncbi.nlm.nih.gov
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
[HTML][HTML] High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific …, 2012 - ncbi.nlm.nih.gov
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific …, 2012 - ui.adsabs.harvard.edu
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
[PDF][PDF] High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - SCIENTIFIC …, 2012 - scienceopen.com
Results LAO/STO interfaces were prepared by pulsed laser deposition (see Methods) with
LAO overlayers of different thickness (from 0 to 36 LAO (110) MLs and 44 LAO (111) MLs) …
LAO overlayers of different thickness (from 0 to 36 LAO (110) MLs and 44 LAO (111) MLs) …
High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - arXiv preprint arXiv …, 2012 - arxiv.org
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
[引用][C] High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific Reports, 2012 - cir.nii.ac.jp
High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces | CiNii Research CiNii
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
[PDF][PDF] High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - SCIENTIFIC …, 2012 - researchgate.net
Results LAO/STO interfaces were prepared by pulsed laser deposition (see Methods) with
LAO overlayers of different thickness (from 0 to 36 LAO (110) MLs and 44 LAO (111) MLs) …
LAO overlayers of different thickness (from 0 to 36 LAO (110) MLs and 44 LAO (111) MLs) …
High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces.
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific …, 2012 - europepmc.org
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
High mobility conduction at (110) and (111) LaAlO 3/SrTiO 3 interfaces
G Herranz, F Sánchez, N Dix, M Scigaj… - Scientific …, 2012 - portalrecerca.uab.cat
In recent years, striking discoveries have revealed that two-dimensional electron liquids
(2DEL) confined at the interface between oxide band-insulators can be engineered to …
(2DEL) confined at the interface between oxide band-insulators can be engineered to …