[HTML][HTML] Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB)
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - AIP Advances, 2012 - pubs.aip.org
Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising next
generation memory technology due to its non-volatility, high speed, low power consumption …
generation memory technology due to its non-volatility, high speed, low power consumption …
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - AIP Advances, 2012 - ui.adsabs.harvard.edu
We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB)
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
[PDF][PDF] Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - 2012 - academia.edu
Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising next
generation memory technology due to its non-volatility, high speed, low power consumption …
generation memory technology due to its non-volatility, high speed, low power consumption …
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - AIP Advances, 2012 - squ.elsevierpure.com
We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB)
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - AIP Advances, 2012 - cir.nii.ac.jp
抄録< jats: p> We have investigated the effect of an ultra-thin Ta insertion in the CoFeB
(CoFeB/Ta/CoFeB) free layer (FL) on magnetic and tunneling magnetoresistance (TMR) …
(CoFeB/Ta/CoFeB) free layer (FL) on magnetic and tunneling magnetoresistance (TMR) …
Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction
VB Naik, H Meng, R Sbiaa - AIP Advances, 2012 - squ.elsevierpure.com
We have investigated the effect of an ultra-thin Ta insertion in the CoFeB (CoFeB/Ta/CoFeB)
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …
free layer (FL) on magnetic and tunneling magnetoresistance (TMR) properties of a CoFeB …