A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic …
A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic …
A new parasitic elements extraction method applied to GaN devices is presented. First, using cold S-parameter measurements, high quality starting values for the extrinsic …
[引用][C]A new small signal model parameter extraction method applied to GaN devices
A JARNDAL, G KOMPA - IEEE MTT-S …, 2005 - Institute of Electrical and Electronics …