A new small signal model parameter extraction method applied to GaN devices

A Jarndal, G Kompa - IEEE MTT-S International Microwave …, 2005 - ieeexplore.ieee.org
A new parasitic elements extraction method applied to GaN devices is presented. First,
using cold S-parameter measurements, high quality starting values for the extrinsic …

[PDF][PDF] A New Small Signal Model Parameter Extraction Method Applied to GaN Devices

A Jarndal, G Kompa - academia.edu
A new parasitic elements extraction method applied to GaN devices is presented. First,
using cold S-parameter measurements, high quality starting values for the extrinsic …

[引用][C] A new small signal model parameter extraction method applied to GaN devices

A JARNDAL - Microwave Symposium Digest, 2005 IEEE MTT-S …, 2005 - cir.nii.ac.jp
A new small signal model parameter extraction method applied to GaN devices | CiNii Research
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …

[PDF][PDF] A New Small Signal Model Parameter Extraction Method Applied to GaN Devices

A Jarndal, G Kompa - researchgate.net
A new parasitic elements extraction method applied to GaN devices is presented. First,
using cold S-parameter measurements, high quality starting values for the extrinsic …

[引用][C] A new small signal model parameter extraction method applied to GaN devices

A Jarndal, G Kompa - IEEE MTT-S International Microwave Symposium …, 2005 - cir.nii.ac.jp
A new small signal model parameter extraction method applied to GaN devices | CiNii Research
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …

[PDF][PDF] A New Small Signal Model Parameter Extraction Method Applied to GaN Devices

A Jarndal, G Kompa - academia.edu
A new parasitic elements extraction method applied to GaN devices is presented. First,
using cold S-parameter measurements, high quality starting values for the extrinsic …

[引用][C] A new small signal model parameter extraction method applied to GaN devices

A JARNDAL, G KOMPA - IEEE MTT-S …, 2005 - Institute of Electrical and Electronics …