Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
JR Weber, CG Van de Walle - Journal of Applied Physics, 2011 - pubs.aip.org
Al 2 O 3 is a promising material for use as a dielectric in metal-oxide-semiconductor devices
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti, CG Van de Walle - Journal of Applied Physics, 2011 - cir.nii.ac.jp
抄録< jats: p> Al 2 O 3 is a promising material for use as a dielectric in metal-oxide-
semiconductor devices based on III-V compound semiconductors. However, the presence of …
semiconductor devices based on III-V compound semiconductors. However, the presence of …
[PDF][PDF] Native defects in Al 2 O 3 and their impact on III-V/Al 2 O 3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti… - JOURNAL OF APPLIED …, 2011 - researchgate.net
There is great interest in the development of metaloxide-semiconductor (MOS) technologies
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti… - Journal of Applied …, 2011 - ui.adsabs.harvard.edu
Al2O3 is a promising material for use as a dielectric in metal-oxide-semiconductor devices
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
based on III-V compound semiconductors. However, the presence of deep levels and fixed …
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti, CG Van de Walle - Journal of Applied Physics, 2011 - pubs.aip.org
There is great interest in the development of metaloxide-semiconductor (MOS) technologies
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …
[PDF][PDF] Native defects in Al 2 O 3 and their impact on III-V/Al 2 O 3 metal-oxide-semiconductor-based devices
JR Weber, A Janotti… - JOURNAL OF APPLIED …, 2011 - researchgate.net
There is great interest in the development of metaloxide-semiconductor (MOS) technologies
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …
based on III-V semiconductors, as these materials offer significantly higher intrinsic carrier …