Strain integration and performance optimization in sub-20nm FDSOI CMOS technology
R Berthelon - 2018 - theses.hal.science
The Ultra-Thin Body and Buried oxide Fully Depleted Silicon On Insulator (UTBB FDSOI)
CMOS technology has been demonstrated to be highly efficient for low power and low …
CMOS technology has been demonstrated to be highly efficient for low power and low …
Strain integration and performance optimization in sub-20nm FDSOI CMOS technology
R Berthelon - 2018 - theses.fr
Résumé La technologie CMOS à base de Silicium complètement déserté sur isolant
(FDSOI) est considérée comme une option privilégiée pour les applications à faible …
(FDSOI) est considérée comme une option privilégiée pour les applications à faible …
Strain integration and performance optimization in sub-20nm FDSOI CMOS technology
R Berthelon - 2018 - cnrs.hal.science
The Ultra-Thin Body and Buried oxide Fully Depleted Silicon On Insulator (UTBB FDSOI)
CMOS technology has been demonstrated to be highly efficient for low power and low …
CMOS technology has been demonstrated to be highly efficient for low power and low …
Strain integration and performance optimization in sub-20nm FDSOI CMOS technology
R Berthelon - 2018 - hal.science
The Ultra-Thin Body and Buried oxide Fully Depleted Silicon On Insulator (UTBB FDSOI)
CMOS technology has been demonstrated to be highly efficient for low power and low …
CMOS technology has been demonstrated to be highly efficient for low power and low …