Graphene field-effect transistors based on boron–nitride dielectrics
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
[引用][C] Graphene field-effect transistors based on boron nitride gate dielectrics
CD Inanc Meric, A Young, J Hone, P Kim… - 2010 International …, 2010 - cir.nii.ac.jp
Graphene field-effect transistors based on boron nitride gate dielectrics | CiNii Research CiNii
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
Graphene field-effect transistors based on boron nitride gate dielectrics
I Meric, CR Dean, AF Young, J Hone, P Kim… - arXiv e …, 2011 - ui.adsabs.harvard.edu
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
[PDF][PDF] Graphene field-effect transistors based on boron nitride gate dielectrics
I Meric, CR Dean, AF Young, J Hone, P Kim… - researchgate.net
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
[PDF][PDF] Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
I Meric, CR Dean, N Petrone, L Wang… - … of the IEEE, 2013 - bioee.ee.columbia.edu
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
Graphene field-effect transistors based on boron nitride gate dielectrics
I Meric, C Dean, A Young, J Hone… - 2010 International …, 2010 - ieeexplore.ieee.org
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
[PDF][PDF] Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
I Meric, CR Dean, N Petrone, L Wang… - Proceedings of the …, 2013 - scholar.archive.org
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
Graphene field-effect transistors based on boron nitride gate dielectrics
I Meric, CR Dean, AF Young, J Hone, P Kim… - arXiv preprint arXiv …, 2011 - arxiv.org
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
[PDF][PDF] Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
I Meric, CR Dean, N Petrone, L Wang… - Proceedings of the …, 2013 - bioee-columbia.org
Two-dimensional atomic sheets of graphene represent a new class of nanoscale materials
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
with potential applications in electronics. However, exploiting the intrinsic characteristics of …
[PDF][PDF] Graphene field-effect transistors based on boron nitride gate dielectrics
CD Inanc Meric, A Young, J Hone, P Kim, KL Shepard - picture.iczhiku.com
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …
nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices …