Deep learning approach to estimating work function fluctuation of gate-all-around silicon nanosheet MOSFETs with a ferroelectric HZO layer

R Butola, Y Li, SR Kola - 2022 6th IEEE Electron Devices …, 2022 - ieeexplore.ieee.org
Highly scaled MOSFETs are suffering from various fluctuations. In this paper, an artificial
neural network (ANN) device modeling technique is reported for gate-all-around silicon …
被引用次数：3 相关文章

Deep Learning Approach to Estimating Work Function Fluctuation of Gate-All-Around Silicon Nanosheet MOSFETs with A Ferroelectric HZO Layer

R Butola, Y Li, SR Kola - 6th IEEE Electron Devices Technology …, 2022 - scholar.nycu.edu.tw
Highly scaled MOSFETs are suffering from various fluctuations. In this paper, an artificial
neural network (ANN) device modeling technique is reported for gate-all-around silicon …