Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

F Spaepen, D Turnbull, JM Poate… - Journal of Applied …, 1985 - pubs.aip.org
Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …
被引用次数：476 相关文章

Ca~ orrimetric studies of crystaUization and relaxation of amorphous Si and Ge prepared by ion imp~~ mtation

EP Donovan, F Spaepen, D Turnbull, JM Poate… - J. Appl. Phys, 1985 - pubs.aip.org
Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …

[引用][C] Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

EP DONOVAN, F SPAEPEN… - Journal of applied …, 1985 - pascal-francis.inist.fr
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by
ion implantation CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

EP Donovan, F Spaepen, D Turnbull… - Journal of Applied …, 1985 - ui.adsabs.harvard.edu
Abstract Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of
single crystal substrates, have been crystallized in a differential scanning calorimeter (DSC) …

[引用][C] Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

EP Donovan, F Spaepen, D Turnbull, JM Poate… - Journal of Applied …, 1985 - cir.nii.ac.jp
Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by
ion implantation | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …

[引用][C] Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

EP DONOVAN, F SPAEPEN… - Journal of …, 1985 - American Institute of Physics