A/spl mu/trench Phase-Change Memory (PCM) cell with MOSFET selector and its integration
in a 4-Mb experimental chip fabricated in 0.18-/spl mu/m CMOS technology are presented. A …

MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-m CMOS
technology are presented. A cascode bitline biasing scheme allows read and write voltages …

4-Mb MOSFET-selected μtrench phase-change memory experimental chip CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search Advanced …

MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-m CMOS
technology are presented. A cascode bitline biasing scheme allows read and write voltages …

4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS 4-Mb MOSFET-selected /spl …

4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip | CiNii
Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …

MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-m CMOS
technology are presented. A cascode bitline biasing scheme allows read and write voltages …

A μtrench Phase-Change Memory (PCM) cell with MOSFET selector and its integration in a
4-Mb experimental chip fabricated in 0.18-μm CMOS technology are presented. A cascode …

MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-m CMOS
technology are presented. A cascode bitline biasing scheme allows read and write voltages …

MOSFET selector and its integration in a 4-Mb experimental chip fabricated in 0.18-m CMOS
technology are presented. A cascode bitline biasing scheme allows read and write voltages …