L Chen, Z Li - Journal of Semiconductors, 2012 - inis.iaea.org
[en] This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS …
C Liang, L Zhiqun - Journal of Semiconductors, 2012 - jos.ac.cn
This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 m RF-CMOS technology. The …
C Liang, L Zhiqun - Journal of Semiconductors, 2012 - osti.gov
This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 {mu} m RF-CMOS technology. The …
C Liang, L Zhiqun - Journal of Semiconductors, 2012 - jos.ac.cn
This paper presents a low noise amplifier (LNA), which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS technology. The …