Remote capacitive sensing in two-dimensional quantum-dot arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - Nano Letters, 2020 - ACS Publications
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …

[PDF][PDF] Remote capacitive sensing in two dimension quantum dot arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - researchgate.net
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect
transistors fabricated using a complementary metal-oxide-semiconductor (CMOS) …

Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays

J Duan, M Fogarty, J Williams, L HUTIN, M Vinet… - Bulletin of the American …, 2021 - APS
We investigate gate-induced quantum dots in silicon nanowire fabricated using a foundry-
compatible fully depleted silicon-on-insulator (FD-SOI) process. A series of split gates …

Remote capacitive sensing in two-dimension quantum-dot arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - arXiv preprint arXiv …, 2020 - arxiv.org
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect
transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) …

Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays

J Duan, MA Fogarty, J Williams, L Hutin… - Nano …, 2020 - pubmed.ncbi.nlm.nih.gov
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …

Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - Nano …, 2020 - discovery.ucl.ac.uk
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …

[PDF][PDF] Remote capacitive sensing in two-dimensional quantum-dot arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - scholar.archive.org
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A …

Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays

J Duan, MA Fogarty, J Williams, L Hutin… - Nano …, 2020 - ui.adsabs.harvard.edu
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect
transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) …

[PDF][PDF] Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - Nano Lett, 2020 - ucl.ac.uk
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …

Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays.

J Duan, MA Fogarty, J Williams, L Hutin, M Vinet… - Nano Letters, 2020 - europepmc.org
We investigate gate-induced quantum dots in silicon nanowire field-effect transistors
fabricated using a foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process. A …