Ga2O3 nanowires prepared by physical evaporation

HZ Zhang, YC Kong, YZ Wang, X Du, ZG Bai… - Solid State …, 1999 - Elsevier
Gallium oxide nanowires (GaONWs) were obtained by evaporation from a bulk gallium
target. The GaONWs, with mean diameter around 60nm, are of monocrystalline nature with …

Ga2O3 nanowires prepared by physical evaporation

HZ Zhang, YC Kong, YZ Wang, X Du, ZG Bai… - Solid State …, 1999 - elibrary.ru
Gallium oxide nanowires (GaONWs) were obtained by evaporation from a bulk gallium
target. The GaONWs, with mean diameter around 60nm, are of monocrystalline nature with …

[引用][C] Ga2O3 nanowires prepared by physical evaporation

HZ Zhang, YC Kong, YZ Wang, X Du, ZG Bai… - Solid State …, 1999 - cir.nii.ac.jp
Ga2O3 nanowires prepared by physical evaporation | CiNii Research CiNii 国立情報学
研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学 …

Ga 2O 3 nanowires prepared by physical evaporation

HZ Zhang, YC Kong, YZ Wang, X Du… - Solid State …, 1999 - ui.adsabs.harvard.edu
Gallium oxide nanowires (GaONWs) were obtained by evaporation from a bulk gallium
target. The GaONWs, with mean diameter around 60 nm, are of monocrystalline nature with …

[引用][C] Ga2O3 nanowires prepared by physical evaporation

HZ ZHANG, YC KONG, YZ WANG, X DU… - Solid state …, 1999 - pascal-francis.inist.fr
Ga2O3 nanowires prepared by physical evaporation CNRS Inist Pascal-Francis CNRS
Pascal and Francis Bibliographic Databases Simple search Advanced search Search by …

[引用][C] Ga2O3 nanowires prepared by physical evaporation

HZ ZHANG, YC KONG, YZ WANG, X DU, ZG BAI… - Solid state …, 1999 - Elsevier