Strain-induced island scaling during heteroepitaxy
W Dorsch, HP Strunk, H Wawra, G Wagner… - Applied physics …, 1998 - pubs.aip.org
We investigated the composition-dependent size of pseudomorphic Si 1− x Ge x islands on
Si (001). Si 1− x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The …
Si (001). Si 1− x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The …
[PDF][PDF] Strain-induced island scaling during Si1 xGex heteroepitaxy
W Dorscha, HP Strunk, H Wawra, G Wagner… - Applied Physics …, 1998 - researchgate.net
We investigated the composition-dependent size of pseudomorphic Si1xGex islands on
Si001. Si1xGex layers with 0.05x 0.54 were deposited from metallic solution. The island …
Si001. Si1xGex layers with 0.05x 0.54 were deposited from metallic solution. The island …
Strain-induced island scaling during Si1 xGex heteroepitaxy
W Dorscha, HP Strunk, H Wawra, G Wagner… - Appl. Phys. Lett, 1998 - pubs.aip.org
We investigated the composition-dependent size of pseudomorphic Si1xGex islands on
Si001. Si1xGex layers with 0.05x 0.54 were deposited from metallic solution. The island …
Si001. Si1xGex layers with 0.05x 0.54 were deposited from metallic solution. The island …
Strain-induced island scaling during Si1-xGex heteroepitaxy
W Dorsch, HP Strunk, H Wawra… - Applied Physics …, 1998 - ui.adsabs.harvard.edu
We investigated the composition-dependent size of pseudomorphic Si 1-x Ge x islands on Si
(001). Si 1-x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The …
(001). Si 1-x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The …