Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, DB Zhang, F Yang, HQ Lin, H Xu… - 2D Materials, 2015 - iopscience.iop.org
Heterostructures are often expected to be of enhanced electronic properties compared with
homogeneous ones. Valuable experimental efforts have been devoted to the fabrication of …
被引用次数：46 相关文章

Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, F Yang, K Chang, DB Zhang, HQ Lin, H Xu - 2D Materials, 2015 - inis.iaea.org
[en] Heterostructures are often expected to be of enhanced electronic properties compared
with homogeneous ones. Valuable experimental efforts have been devoted to the fabrication …

Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, DB Zhang, F Yang, HQ Lin, H Xu… - 2D …, 2015 - ui.adsabs.harvard.edu
Heterostructures are often expected to be of enhanced electronic properties compared with
homogeneous ones. Valuable experimental efforts have been devoted to the fabrication of …
[PDF] researchgate.net

[PDF][PDF] Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, DB Zhang, F Yang, HQ Lin, H Xu, K Chang - 2015 - researchgate.net
Heterostructures are often expected to be of enhanced electronic properties compared with
homogeneous ones. Valuable experimental efforts have been devoted to the fabrication of …

[引用][C] Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures

D Zhang, DB Zhang, F Yang, HQ Lin, H Xu, K Chang - 2D Materials, 2015 - cir.nii.ac.jp
Interface engineering of electronic properties of graphene/boron nitride lateral heterostructures
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