Etching of scandium-doped aluminum nitride using inductively coupled plasma dry etch and tetramethyl ammonium hydroxide

ASMZ Shifat, I Stricklin, RK Chityala, A Aryal, G Esteves… - MRS Advances, 2023 - Springer
Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al1− x N as an advantageous material for …
被引用次数：2 相关文章

Etching of Scandium-Doped Aluminum Nitride using Inductively Coupled Plasma Dry Etch and Tetramethyl Ammonium Hydroxide

Z Shifat, I Stricklin, RK Chityala, A Aryal, G Esteves… - mrs.org
Etching of Scandium-Doped Aluminum Nitride using Inductively Coupled Plasma Dry Etch and
Tetramethyl Ammonium Hydroxide Close Menu ❌ Meetings & Events Spring Meetings & …

Etching of scandium-doped aluminum nitride using inductively coupled plasma dry etch and tetramethyl ammonium hydroxide

ASM Shifat, I Stricklin, RK Chityala, A Aryal… - MRS …, 2023 - ui.adsabs.harvard.edu
Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al 1− x N as an advantageous material for …

Etching of scandium-doped aluminum nitride using inductively coupled plasma dry etch and tetramethyl ammonium hydroxide

ASM Shifat, I Stricklin, RK Chityala, A Aryal… - MRS …, 2023 - ui.adsabs.harvard.edu
Abstract Properties such as wide bandgap, higher electromechanical coupling, and low
dielectric permittivity have propelled Sc x Al 1− x N as an advantageous material for …

Etching of Scandium-Doped Aluminum Nitride using Inductively Coupled Plasma Dry Etch and Tetramethyl Ammonium Hydroxide

Z Shifat, I Stricklin, RK Chityala, A Aryal, G Esteves… - mrs.org
Etching of Scandium-Doped Aluminum Nitride using Inductively Coupled Plasma Dry Etch
and Tetramethyl Ammonium Hydroxide Close Menu ❌ Meetings & Events Spring Meetings …