High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

D Wan, B Jiang, H Huang, C Chen… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Two-dimensional (2D) materials such as WSe 2 are potential for advanced electronics
because of their ultra-thin geometry and unique electrical properties. Herein, a simplified …
被引用次数：16 相关文章
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[PDF][PDF] High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

BJ Da Wan, H Huang, C Chen, A Abliz… - IEEE ELECTRON …, 2020 - dial.uclouvain.be
Two-dimensional (2D) materials such as WSe2 are potential for advanced electronics
because of their ultra-thin geometry and unique electrical properties. Herein, a simplified …

[引用][C] High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

D Wan, B Jiang, H Huang, C Chen… - IEEE Electron …, 2020 - ui.adsabs.harvard.edu
High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping
- NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS High Voltage …

High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

D Wan, H Hao, C CHEN, A Abliz, C Ye… - IEEE Electron Device …, 2020 - dial.uclouvain.be
Two-dimensional (2D) materials such as WSe2 are potential for advanced electronics
because of their ultra-thin geometry and unique electrical properties. Herein, a simplified …