High‐Temperature Treatment of Porous Silicon
VA Labunov, VP Bondarenko… - … status solidi (a), 1987 - Wiley Online Library
Abstract Structure and lattice deformation of porous silicon layers and silicon wafer bending
as a result of high, temperature treatment in H2 atmosphere at 900 to 1200° C are …
as a result of high, temperature treatment in H2 atmosphere at 900 to 1200° C are …
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VA Labunov, VP Bondarenko… - Physica Status …, 1987 - ui.adsabs.harvard.edu
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[引用][C] High-temperature treatment of porous silicon
VA LABUNOV, VP BONDARENKO… - Physica status solidi …, 1987 - pascal-francis.inist.fr
High-temperature treatment of porous silicon CNRS Inist Pascal-Francis CNRS Pascal and
Francis Bibliographic Databases Simple search Advanced search Search by classification …
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[引用][C] High-Temperature Treatment of Porous Silicon
VA Labunov, VP Bondarenko, VE Borisenko… - Physica Status Solidi …, 1987 - cir.nii.ac.jp
High-Temperature Treatment of Porous Silicon | CiNii Research CiNii 国立情報学研究所 学術
情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学図書館の本を …
情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学図書館の本を …
[引用][C] High‐Temperature Treatment of Porous Silicon
VA Labunov, VP Bondarenko, VE Borisenko… - Physica Status Solidi (A …, 1987 - elibrary.ru