1.17-μm highly strained GaInAs-GaAs quantum-well laser
D Schlenker, T Miyamoto, Z Chen… - IEEE Photonics …, 1999 - ieeexplore.ieee.org
IEEE Photonics Technology Letters, 1999•ieeexplore.ieee.org
Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm
GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer,
which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-
long laser with cleaved facets a threshold current density of 200 A/cm 2 is achieved. A
transparency current density of 180 A/cm 2 is estimated for as cleaved devices. A record
high characteristic temperature in this wavelength range of 150 K is achieved.
GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer,
which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-
long laser with cleaved facets a threshold current density of 200 A/cm 2 is achieved. A
transparency current density of 180 A/cm 2 is estimated for as cleaved devices. A record
high characteristic temperature in this wavelength range of 150 K is achieved.
Excellent lasing properties and temperature characteristic of a highly strained 1.17-μm GaInAs-GaAs double-quantum-well laser are reported. We show that a strained buffer layer, which is employed in the device, has no tradeoff on the device performance. For a 1500-μm-long laser with cleaved facets a threshold current density of 200 A/cm 2 is achieved. A transparency current density of 180 A/cm 2 is estimated for as cleaved devices. A record high characteristic temperature in this wavelength range of 150 K is achieved.
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