wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
G Balakrishnan, S Huang, TJ Rotter, A Stintz… - Applied physics …, 2004 - pubs.aip.org
We describe optical and structure characteristics of InAs quantum dashes grown on a GaAs
substrate using an AlGaAsSb metamorphic buffer. The metamorphic buffer increases the
lattice constant of the growth matrix from 5.653 to 5.869 Å. The increased lattice constant of
the growth matrix yields a lattice mismatch with the InAs active region of only 3.2% and
accommodates a large In content to access emission wavelengths> 2.0 μ m. From our
comparison with quantum dot structures, we conclude that the elongated quantum dash …
substrate using an AlGaAsSb metamorphic buffer. The metamorphic buffer increases the
lattice constant of the growth matrix from 5.653 to 5.869 Å. The increased lattice constant of
the growth matrix yields a lattice mismatch with the InAs active region of only 3.2% and
accommodates a large In content to access emission wavelengths> 2.0 μ m. From our
comparison with quantum dot structures, we conclude that the elongated quantum dash …
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