20-Gb/s modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs
IEEE Photonics Technology Letters, 2016•ieeexplore.ieee.org
We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-
cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL
attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin
divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-μm oxide aperture diameter
VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at
bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation …
cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL
attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin
divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-μm oxide aperture diameter
VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at
bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation …
We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-μm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果