2D analytical framework for compact modeling of the electrostatics in undoped DG MOSFETs
Proceedings of the 18th International Conference Mixed Design of …, 2011•ieeexplore.ieee.org
A framework for the 2D analytical closed-form calculation of the electrostatic potential and
electric field in undoped or lightly doped Double-Gate MOSFETs (DG-MOSFETs) and
Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs) in subthreshold region is
presented. Solutions for constant and linear boundary conditions are used to model step by
step the potential and the electric field for these structures of Double-Gate MOSFETs.
electric field in undoped or lightly doped Double-Gate MOSFETs (DG-MOSFETs) and
Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs) in subthreshold region is
presented. Solutions for constant and linear boundary conditions are used to model step by
step the potential and the electric field for these structures of Double-Gate MOSFETs.
A framework for the 2D analytical closed-form calculation of the electrostatic potential and electric field in undoped or lightly doped Double-Gate MOSFETs (DG-MOSFETs) and Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs) in subthreshold region is presented. Solutions for constant and linear boundary conditions are used to model step by step the potential and the electric field for these structures of Double-Gate MOSFETs.
ieeexplore.ieee.org
以上显示的是最相近的搜索结果。 查看全部搜索结果