305-GHz Cascode Power Amplifier Using Capacitive Feedback Fabricated Using SiGe HBT's with fmax of 450 GHz
2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2023•ieeexplore.ieee.org
A 305-GHz power amplifier (PA) fabricated in a 130-nm SiGe HBT BiCMOS technology with
HBT f_t/f_max=350/450 GHz is presented. The PA employs 4 cascode amplification stages
with capacitive feedback between the collector of common base stage and the base of
common emitter stage that increases power gain of each stage by~ 4 dB and a 4-way power
combiner at the output. The PA achieves a measured Psat of 7.5 dBm and OP 1dB of 4.5
dBm at 290 GHz. The design reaches a peak small signal gain of 14.5 dB at 305 GHz. The …
HBT f_t/f_max=350/450 GHz is presented. The PA employs 4 cascode amplification stages
with capacitive feedback between the collector of common base stage and the base of
common emitter stage that increases power gain of each stage by~ 4 dB and a 4-way power
combiner at the output. The PA achieves a measured Psat of 7.5 dBm and OP 1dB of 4.5
dBm at 290 GHz. The design reaches a peak small signal gain of 14.5 dB at 305 GHz. The …
A 305-GHz power amplifier (PA) fabricated in a 130-nm SiGe HBT BiCMOS technology with HBT GHz is presented. The PA employs 4 cascode amplification stages with capacitive feedback between the collector of common base stage and the base of common emitter stage that increases power gain of each stage by ~4 dB and a 4-way power combiner at the output. The PA achieves a measured Psat of 7.5 dBm and OP 1dB of 4.5 dBm at 290 GHz. The design reaches a peak small signal gain of 14.5 dB at 305 GHz. The circuit consumes 1008 mW DC power from a 4-V supply and achieves a PAE max of 0.39%. The PA exhibits the highest Psat and OP1dB at 290 GHz, and the highest small signal gain at 305 GHz among the PA's fabricated using SiGe HBT's with less than 500 GHz.
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