… 2(a) shows a schematic of the device structure and the fabrication process flow. To fabricate
… 47As-oninsulator on Si for monolithic 3D via novel epitaxial lift-off (ELO) and donor wafer re-…

… Three-Independent-Gate (TIG)-RFET structure with pure SiGe channel. a) A 3D sketch
illustrating … If a negative back-bias voltage is applied, the entire semiconductor bands are shifted …

… The structure consists of an ultrathin \({\mathrm{SiO}}_2\) layer over the p-Si region placed
on the BOX. The various device structural parameters used in this study are: gate oxide (GOX) …

… The Si trigate structure analyzed in this brief has a rectangular cross-sectional channel,
being Ws and Hs the semiconductor width and height, and tins = 1.2 nm and tbox = 10 nm the …

… When back-bias of 15 V is applied through the bottom silicon substrate, the voltage is
gradually distributed … His current research interests include reliability of semiconductor devices. …

… of standard FD devices-based structure. In … back bias applied to both n- or p-type devices.
Finally, it is shown that the mirroring precision of current mirrors composed by SC structures …

… The fT maps of 3D stacked InGaAs HEMT with back metal line for (a) negative back bias, (b)
zero back bias, and (c) positive back bias. The fMAX maps of 3D stacked InGaAs HEMT with …

… It increases when the device structure evolves more towards pure GAA device for high
performance; and meanwhile the modulation capability of Idlin decreases as manifested by the …

… in the ultrascaled FDSOI device, taking the impact of gate area scaling as well as
quantum effects into account. It also facilitates the evaluation of back bias effectiveness variability …

… back bias VB at room temperature and at 4.2 K, on the same transistor as in (a). The back
bias … Ghibaudo, “Physics and performance of nanoscale semiconductor devices at cryogenic …