4H-SiC epitaxy with very smooth surface and low basal plane dislocation on 4 degree off-axis wafer
GY Chung, MJ Loboda, J Zhang, JW Wan… - Materials Science …, 2011 - Trans Tech Publ
GY Chung, MJ Loboda, J Zhang, JW Wan, EP Carlson, TJ Toth, RE Stahlbush…
Materials Science Forum, 2011•Trans Tech PublImprovements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to
enable growth of commercial SiC power device applications in areas such as inverters for
photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy
surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis
substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a
newly observed triangular defect.
enable growth of commercial SiC power device applications in areas such as inverters for
photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy
surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis
substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a
newly observed triangular defect.
Improvements in the quality and consistency of 4H-SiC epitaxy wafers are now starting to enable growth of commercial SiC power device applications in areas such as inverters for photo-voltaic systems and power supplies. Recent work has achieved very low epitaxy surface roughness and very low BPD (Basal plane dislocation) in the on 4 degree off-axis substrates. In this paper, we report characterization of the very low BPD epitaxy wafers and a newly observed triangular defect.
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