94GHz power-combining power amplifier with+ 13dBm saturated output power in 65nm CMOS
D Sandström, B Martineau, M Varonen… - 2011 IEEE Radio …, 2011 - ieeexplore.ieee.org
2011 IEEE Radio Frequency Integrated Circuits Symposium, 2011•ieeexplore.ieee.org
A power combining power amplifier utilizing cascode topology and transformer-based
matching elements is presented in this paper. The amplifier achieves+ 13 dBm saturated
output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only
0.069 mm 2. Amplifier is implemented in an industrial 65nm CMOS process taking into
account reliability issues at high output power level. The amplifier is also ESD-protected at
the input and at the output.
matching elements is presented in this paper. The amplifier achieves+ 13 dBm saturated
output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only
0.069 mm 2. Amplifier is implemented in an industrial 65nm CMOS process taking into
account reliability issues at high output power level. The amplifier is also ESD-protected at
the input and at the output.
A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm 2 . Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.
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