A 0.4 V ultra low-power UWB CMOS LNA employing noise cancellation

M Parvizi, K Allidina, F Nabki… - 2013 IEEE International …, 2013 - ieeexplore.ieee.org
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013ieeexplore.ieee.org
This paper presents an ultra low voltage (ULV), ultra low power (ULP) and ultra wideband
CMOS low noise amplifier with noise cancelling. A design methodology for optimizing the
trade-off between power consumption and RF performance for a MOS transistor is
employed. A current-reuse technique is used to lower the power consumption, and an
inductive g m-boosting technique is exploited to increase the gain and improve input
matching at high frequencies. The circuit is implemented in a 90nm TSMC CMOS …
This paper presents an ultra low voltage (ULV), ultra low power (ULP) and ultra wideband CMOS low noise amplifier with noise cancelling. A design methodology for optimizing the trade-off between power consumption and RF performance for a MOS transistor is employed. A current-reuse technique is used to lower the power consumption, and an inductive g m -boosting technique is exploited to increase the gain and improve input matching at high frequencies. The circuit is implemented in a 90nm TSMC CMOS technology. Simulation results demonstrate a 15dB gain, a 6.8GHz bandwidth and a 4.5-5.3dB noise figure. The power consumption is only 410μW at a 0.4V supply.
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