A 124–184 GHz amplifier using slow-wave transmission lines in 28-nm FDSOI CMOS process
2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on …, 2016•ieeexplore.ieee.org
This paper presents a 124 to 184 GHz single-ended amplifier designed in 28-nm FDSOI
CMOS technology. The amplifier consists of four common-source gain stages and
broadband matching networks for input, output and inter-stage matching employing slow-
wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the
amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth of 61 GHz.
CMOS technology. The amplifier consists of four common-source gain stages and
broadband matching networks for input, output and inter-stage matching employing slow-
wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the
amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth of 61 GHz.
This paper presents a 124 to 184 GHz single-ended amplifier designed in 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and broadband matching networks for input, output and inter-stage matching employing slow-wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth of 61 GHz.
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