A 3V CMOS-MEMS oscillator in 0.35 μm CMOS technology
2013 Transducers & Eurosensors XXVII: The 17th International …, 2013•ieeexplore.ieee.org
This paper presents the design, fabrication and characterization of a fully monolithic 11-MHz
oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3
V operation of the commercial 0.35-μm CMOS technology used to fabricate the device. The
CMOS-MEMS oscillator comprises a polysilicon double-ended tuning fork (DETF) resonator
embedded in a differential Pierce oscillator scheme. The device is suitable for RF
applications and ultrasensitive mass sensing.
oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3
V operation of the commercial 0.35-μm CMOS technology used to fabricate the device. The
CMOS-MEMS oscillator comprises a polysilicon double-ended tuning fork (DETF) resonator
embedded in a differential Pierce oscillator scheme. The device is suitable for RF
applications and ultrasensitive mass sensing.
This paper presents the design, fabrication and characterization of a fully monolithic 11-MHz oscillator circuit operating with a low voltage MEMS resonator biased below the nominal 3.3V operation of the commercial 0.35-μm CMOS technology used to fabricate the device. The CMOS-MEMS oscillator comprises a polysilicon double-ended tuning fork (DETF) resonator embedded in a differential Pierce oscillator scheme. The device is suitable for RF applications and ultrasensitive mass sensing.
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