A 53–117 GHz LNA in 28-nm FDSOI CMOS
IEEE Microwave and Wireless Components Letters, 2017•ieeexplore.ieee.org
This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise
amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of
38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of
6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the
lowest NF with widest bandwidth among previously presented wideband CMOS LNAs
operating in the W-band.
amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of
38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of
6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the
lowest NF with widest bandwidth among previously presented wideband CMOS LNAs
operating in the W-band.
This letter presents the design of a wideband millimeter-wave (mm-wave) low-noise amplifier (LNA) in a 28-nm FDSOI CMOS technology. Having a total power consumption of 38.2 mW, the LNA provides gain over 12 dB from 53 to 117 GHz, and has a measured NF of 6 dB from 75 to 105 GHz. To the author's best knowledge, the presented LNA achieves the lowest NF with widest bandwidth among previously presented wideband CMOS LNAs operating in the W-band.
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