was investigated. C: H was deposited at a methane pressure of 1.6 Pa and a substrate
temperature between room temperature and 700 K. The film composition, morphology, and
structure were investigated by high‐energy ion beam analysis and scanning electron
microscopy. A combined plasma‐surface model for thin‐film deposition is proposed, which
includes the electron‐induced dissociation of methane in the plasma and a growth model …