A compact quadrature coupler on GaAs IPD process for LTE applications
A compact quadrature coupler—using intertwined mutual inductors by the proposed GaAs
integrated passive device (IPD) process—is developed by considering the quality factor of
inductor and minimum insertion loss for the long term evolution (LTE) applications. At the
center frequency of LTE bands 5 and 8, the quadrature coupler achieved À3. 45dB of
insertion loss S21 and À3. 43dB of coupling S41 with less than 0.65 degrees of phase error
over the frequency range. The reflection coefficient S11 and the isolation S31 are À24. 32 …
integrated passive device (IPD) process—is developed by considering the quality factor of
inductor and minimum insertion loss for the long term evolution (LTE) applications. At the
center frequency of LTE bands 5 and 8, the quadrature coupler achieved À3. 45dB of
insertion loss S21 and À3. 43dB of coupling S41 with less than 0.65 degrees of phase error
over the frequency range. The reflection coefficient S11 and the isolation S31 are À24. 32 …
Abstract
A compact quadrature coupler—using intertwined mutual inductors by the proposed GaAs integrated passive device (IPD) process—is developed by considering the quality factor of inductor and minimum insertion loss for the long term evolution (LTE) applications. At the center frequency of LTE bands 5 and 8, the quadrature coupler achieved À3. 45dB of insertion loss S21 and À3. 43dB of coupling S41 with less than 0.65 degrees of phase error over the frequency range. The reflection coefficient S11 and the isolation S31 are À24. 32 dB and À23. 45 dB, respectively. This coupler can be usable for a compact quadrature 3-dB divider/combiner as partial component of a balanced power amplifier.
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