A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

S Duenas, H Castán, H García… - Semiconductor …, 2005 - iopscience.iop.org
… –1.0 at.% or lower in the films grown from Ti(OC2H5)4 and … TiO2 films grown at temperatures
225–275 ◦ C in this study, the reflection high energy electron diffraction (RHEED) analysis

A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

G González Díaz, E San Andrés Serrano - 2005 - docta.ucm.es
… –1.0 at.% or lower in the films grown from Ti(OC2H5)4 and … TiO2 films grown at temperatures
225–275 ◦ C in this study, the reflection high energy electron diffraction (RHEED) analysis

Influence of pyrolytic temperature on optoelectronic properties and the energy harvesting applications of high pressure TiO2 thin films

MD Pushpa, MS Crespo, MM Cristopher, P Karthick… - Vacuum, 2019 - Elsevier
… optical and electrical properties of the deposited TiO 2 thin films were … resistivity measurements,
respectively. The structural … phase showed a higher reactivity with the rate constant (k) of …

Ageing effects on electrical resistivity of Nb-doped TiO2 thin films deposited at a high rate by reactive DC magnetron sputtering

D Casotti, V Orsini, A di Bona, S Gardonio… - Applied Surface …, 2018 - Elsevier
… stability of electrical resistivity in Nb-doped TiO 2 thin films grown at a high rate by a reactive
DC … at low working pressure are continuous, while those grown at high pressure show a well-…

A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

S Dueñas, H Castán, J Barbolla, E San Andrés… - Journal of Materials …, 2003 - Springer
electrical properties of TiO2 films are very sensitive to deposition conditions. In this work, we
present a new method to fabricate improved TiO2 films by using a highpressurefilm grown

Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM

SJ Song, JY Seok, JH Yoon, KM Kim, GH Kim… - Scientific reports, 2013 - nature.com
… two types of TiO 2 films grown by plasma-enhanced atomic … and electrically distinctive
properties: PEALD film exhibited … TiO 2 film was deposited on the same Pt substrate by reactive RF …

Pressure dependence of electrical conductivity of black titania hydrogenated at different temperatures

J Liu, J Yan, Q Shi, H Dong, J Zhang… - The Journal of …, 2019 - ACS Publications
high pressure (HP) and studied the pressure dependences of the structure change, the
electrical conductivity, … –vis spectroscopy, and electrical transport measurements. Results reveal …

A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

G González Díaz, E San Andrés Serrano - 2003 - docta.ucm.es
electrical properties of TiO2 films are very sensitive to deposition conditions. In this work, we
present a new method to fabricate improved TiO2 films by using a highpressurefilm grown

Comparison of microstructure and electronic properties of TiO2 thin films grown by different techniques

AK Prasad, R Jha, R Ramaseshan… - Surface …, 2011 - journals.sagepub.com
… with the theoretical studies. Nanoindentation studies performed on the films grown on Si
showed higher hardness and modulus for radio frequency sputtering films compared to other …

Structural, morphological, and optical properties of TiO2 thin films grown by atomic layer deposition on fluorine doped tin oxide conductive glass

W Chiappim, GE Testoni, RS Moraes, RS Pessoa… - Vacuum, 2016 - Elsevier
Film structure was sensitive by change of process temperature for FTO substrate. … a higher
concentration of chlorine in TiO 2 film grown on FTO in comparison with that grown on Si(100). …