A dual-band 2.45/6 GHz CMOS LNA utilizing a dual-resonant transformer-based matching network
NM Neihart, J Brown, X Yu - … on Circuits and Systems I: Regular …, 2012 - ieeexplore.ieee.org
NM Neihart, J Brown, X Yu
IEEE Transactions on Circuits and Systems I: Regular Papers, 2012•ieeexplore.ieee.orgThis paper analyzes and presents design equations for a new transformer-based matching
network capable of simultaneously matching two different frequencies. This network is then
used to realize a dual-band low-noise amplifier that is fabricated in a 0.13 μm CMOS
process and is capable of operating at 2.45 GHz and 6 GHz. The measured S 21 and noise
figure for 2.45 GHz (6 GHz) is 9.4 dB (18.9 dB) and 2.8 dB (3.8 dB), respectively. The IIP3 is
measured to be-4.3 dBm and-5.6 dBm at 2.45 GHz and 6 GHz, respectively. The power …
network capable of simultaneously matching two different frequencies. This network is then
used to realize a dual-band low-noise amplifier that is fabricated in a 0.13 μm CMOS
process and is capable of operating at 2.45 GHz and 6 GHz. The measured S 21 and noise
figure for 2.45 GHz (6 GHz) is 9.4 dB (18.9 dB) and 2.8 dB (3.8 dB), respectively. The IIP3 is
measured to be-4.3 dBm and-5.6 dBm at 2.45 GHz and 6 GHz, respectively. The power …
This paper analyzes and presents design equations for a new transformer-based matching network capable of simultaneously matching two different frequencies. This network is then used to realize a dual-band low-noise amplifier that is fabricated in a 0.13 μm CMOS process and is capable of operating at 2.45 GHz and 6 GHz. The measured S 21 and noise figure for 2.45 GHz (6 GHz) is 9.4 dB (18.9 dB) and 2.8 dB (3.8 dB), respectively. The IIP3 is measured to be -4.3 dBm and -5.6 dBm at 2.45 GHz and 6 GHz, respectively. The power consumption of the system (excluding the buffer) is 2.79 mW from a 1.2 V supply and the total area is 900 μm × 680 μm.
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