A morphological and electronic study of ultrathin rear passivated Cu (In, Ga) Se2 solar cells
The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium
di-Selenide Cu (In, Ga) Se 2 (CIGS) solar cells is studied. Point contact structures have been
created on 25 nm Al 2 O 3 layer using e-beam lithography. Reference solar cells with
ultrathin CIGS layers provide devices with average values of light to power conversion
efficiency of 8.1% while for passivated cells values reached 9.5%. Electronic properties of
passivated cells have been studied before, but the influence of growing the CIGS on Al 2 O 3 …
di-Selenide Cu (In, Ga) Se 2 (CIGS) solar cells is studied. Point contact structures have been
created on 25 nm Al 2 O 3 layer using e-beam lithography. Reference solar cells with
ultrathin CIGS layers provide devices with average values of light to power conversion
efficiency of 8.1% while for passivated cells values reached 9.5%. Electronic properties of
passivated cells have been studied before, but the influence of growing the CIGS on Al 2 O 3 …
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