A physics-based drain current model for Si1-xGex source/drain NT JLFET for enhanced hot carrier reliability with temperature measurement
In this paper, we report, the hot carrier reliability issue in the Si 1-x Ge x source/drain
nanotube (NT) junctionless field-effect transistor (JLFET) with temperature variations. The
surface potential, electric field and drain current have been formulated by developing a
physics-based analytical model. SiGe in the source/drain regions creates valence band
discontinuity of ΔE g= 0.23 eV which significantly increases the tunneling width at the
channel/drain interface and therefore, results in a diminished L-BTBT action. The results …
nanotube (NT) junctionless field-effect transistor (JLFET) with temperature variations. The
surface potential, electric field and drain current have been formulated by developing a
physics-based analytical model. SiGe in the source/drain regions creates valence band
discontinuity of ΔE g= 0.23 eV which significantly increases the tunneling width at the
channel/drain interface and therefore, results in a diminished L-BTBT action. The results …
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