Active devices choice and design of an all cryogenic superconductor resonator oscillator
D Chaudy, O Llopis, B Marcilhac… - … Joint Conference of …, 2017 - ieeexplore.ieee.org
2017 Joint Conference of the European Frequency and Time Forum and …, 2017•ieeexplore.ieee.org
Several silicon-germanium bipolar transistors have been measured at cryogenic
temperature regarding their gain and phase noise performance. The electrical model of the
chosen device has been extracted. Using this model, the phase noise performance of a
cryogenic superconductor oscillator has been simulated. The results are very promising,
with a phase noise level of-155 dBc/Hz at 1 kHz offset from of a 1 GHz carrier.
temperature regarding their gain and phase noise performance. The electrical model of the
chosen device has been extracted. Using this model, the phase noise performance of a
cryogenic superconductor oscillator has been simulated. The results are very promising,
with a phase noise level of-155 dBc/Hz at 1 kHz offset from of a 1 GHz carrier.
Several silicon-germanium bipolar transistors have been measured at cryogenic temperature regarding their gain and phase noise performance. The electrical model of the chosen device has been extracted. Using this model, the phase noise performance of a cryogenic superconductor oscillator has been simulated. The results are very promising, with a phase noise level of -155 dBc/Hz at 1 kHz offset from of a 1 GHz carrier.
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