Adsorption anisotropy in layer chalcogenides
RH Williams, IG Higginbotham… - Journal of Physics C …, 1972 - iopscience.iop.org
RH Williams, IG Higginbotham, MAB Whitaker
Journal of Physics C: Solid State Physics, 1972•iopscience.iop.orgAuger electron spectroscopy has been applied to investigate surfaces of some layer
chalcogenides prepared by cleavage and by argon ion bombardment. The creation of
defects leads to large increases in the reactivities of basal faces. The sticking coefficient for
oxygen is found to be orders of magnitude greater for nonbasal surfaces than for basal
faces, the anisotropy factor being at least 10 11 for TiTe 2 and NbSe 2.
chalcogenides prepared by cleavage and by argon ion bombardment. The creation of
defects leads to large increases in the reactivities of basal faces. The sticking coefficient for
oxygen is found to be orders of magnitude greater for nonbasal surfaces than for basal
faces, the anisotropy factor being at least 10 11 for TiTe 2 and NbSe 2.
Abstract
Auger electron spectroscopy has been applied to investigate surfaces of some layer chalcogenides prepared by cleavage and by argon ion bombardment. The creation of defects leads to large increases in the reactivities of basal faces. The sticking coefficient for oxygen is found to be orders of magnitude greater for nonbasal surfaces than for basal faces, the anisotropy factor being at least 10 11 for TiTe 2 and NbSe 2.
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