An Integrated 700–1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13-m CMOS
KK Sessou, NM Neihart - IEEE Transactions on Microwave …, 2015 - ieeexplore.ieee.org
IEEE Transactions on Microwave Theory and Techniques, 2015•ieeexplore.ieee.org
A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over
a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip
transformers as part of the output matching network. In addition, a stacked transistor
architecture was used to boost the output power. The PA was fabricated in a 0.13-μm CMOS
process and packaged in a 20-pin quad flat no-leads package. It was configured to operate
at 700, 900, and 1200 MHz with a maximum measured saturated output power of+ 24.6 dBm …
a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip
transformers as part of the output matching network. In addition, a stacked transistor
architecture was used to boost the output power. The PA was fabricated in a 0.13-μm CMOS
process and packaged in a 20-pin quad flat no-leads package. It was configured to operate
at 700, 900, and 1200 MHz with a maximum measured saturated output power of+ 24.6 dBm …
A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm.
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