An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes in GaAs double heterostructures
F Zhang, JF Castaneda, TH Gfroerer… - Light: Science & …, 2022 - nature.com
We demonstrate an all optical approach that can surprisingly offer the possibility of yielding
much more information than one would expect, pertinent to the carrier recombination
dynamics via both radiative and nonradiative processes when only one dominant deep
defect level is present in a semiconductor material. By applying a band-defect state coupling
model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall
(SRH) recombination via the deep defect states on an equal footing for any defect center …
much more information than one would expect, pertinent to the carrier recombination
dynamics via both radiative and nonradiative processes when only one dominant deep
defect level is present in a semiconductor material. By applying a band-defect state coupling
model that explicitly treats the inter-band radiative recombination and Shockley–Read–Hall
(SRH) recombination via the deep defect states on an equal footing for any defect center …
An all optical approach for comprehensive in-operando analysis of radiative and nonradiative recombination processes-deep level optical spectroscopy
F Zhang, J Castaneda, T Gfroerer… - APS March Meeting …, 2022 - ui.adsabs.harvard.edu
We have developed an all optical approach, combining PL and Raman, that can yield
practically all of the quantitative information that is pertinent to the carrier recombination
dynamics via both radiative and nonradiative processes when deep defect levels are
present, including internal quantum efficiency (IQE), minority and majority carrier density,
inter-band radiative recombination rate, minority carrier nonradiative recombination rate,
defect center occupation fraction, defect center density, and minority and majority carrier …
practically all of the quantitative information that is pertinent to the carrier recombination
dynamics via both radiative and nonradiative processes when deep defect levels are
present, including internal quantum efficiency (IQE), minority and majority carrier density,
inter-band radiative recombination rate, minority carrier nonradiative recombination rate,
defect center occupation fraction, defect center density, and minority and majority carrier …
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