In this work, analysis and simulation of all experimentally observed switching modes in
hafnium oxide based resistive random access memories are carried out using a simplified
electrical conduction model. To achieve switching mode variation, two metal-insulator-metal
cells with identical stack combination, but varying oxygen stoichiometry of the hafnia layer,
namely, stoichiometric vs highly deficient, are considered. To access the individual switching
modes, the devices were subjected to a variety of cycling conditions comprising different …