Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
A Parisini, R Nipoti - Journal of Applied Physics, 2013 - pubs.aip.org
The temperature dependence of the Hall hole density and the Hall mobility data of heavy
doped p-type 4H-SiC (Al) materials obtained by Al+ ion implantation have been analysed in
the frame of the charge neutrality condition and the relaxation time approximation. Samples
with implanted Al concentrations in the range 10 19–10 20 cm− 3 and 1950 C/5 min
conventional annealing have been taken into account. The reliability of the calculation has
been critically discussed by focusing the attention on both the validity limits of the models for …
doped p-type 4H-SiC (Al) materials obtained by Al+ ion implantation have been analysed in
the frame of the charge neutrality condition and the relaxation time approximation. Samples
with implanted Al concentrations in the range 10 19–10 20 cm− 3 and 1950 C/5 min
conventional annealing have been taken into account. The reliability of the calculation has
been critically discussed by focusing the attention on both the validity limits of the models for …
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