… work, a physically based analytical quantum threshold voltage model for the triple gate long
… The proposed model is based on the analytical solution of two-dimensional Poisson and two…

… A 3-D analytical model of the DMTG SON MOSFET is presented in this paper and the
device’s level of immunity to the various SCEs is investigated. The device is found to exhibit …

… Abstract—In this paper, simple and analytical models are proposed for a … gates, narrow fin
width and narrow source/drain region width as well. A surface potential based charge model is …

… The similarity between physical structures of TFET and MOSFET permits the utilization of …
This paper proposes a 3D analytical model for TMTG TFET. On the basis of the 3D Poission …

… This section represents 2-D analytical modelling and … potential (Øsmin) of (TG) triple gate
MOSEFT. Fig. 5 shows the … (TG) triple gate structure along with the (SG) single gate model. The …

… An analytical model to determine the device electrostatics and match deviations due to …
Thus, the analytical model presented in this work is based on a self-consistent solution of three-…

… a 2D analytical model for Asymmetric gate stack triple metal gate MOSFET(AGSTMGAAFET…
In this paper we have proposed a triple material gate FET that helps in overcoming existing …

… Abstract—An analytical model for tunnel barrier modulation in triple metal double gate
tunnel FET is presented for the first time in this paper. Three different metals over the channel …

… analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET)
with hetero-dielectric gate … an analytical model of drain current in a silicon tunnel FET with …

… dual-material gate (DMG) SOI MOSFET. However, they failed to provide any analytical
model to support their conclusions. Kumar et al. [14] presented the first analytical model of 2D …