Anisotropic intrinsic anomalous Hall effect in epitaxial Fe films on GaAs (111)
The anomalous Hall effect (AHE) in epitaxial Fe films on GaAs (111) has been investigated
as a function of film thickness and temperature. The intrinsic contribution from the Berry
curvature is singled out from the extrinsic ones and determined to be 821 Ω− 1 cm− 1, which
agrees to the theoretical prediction of 842 Ω− 1 cm− 1 and is considerably smaller than 1100
Ω− 1 cm− 1 for Fe (001). This result provides a direct experimental evidence for the
anisotropy of the intrinsic AHE in single crystal Fe, reflecting its electronic band structure.
as a function of film thickness and temperature. The intrinsic contribution from the Berry
curvature is singled out from the extrinsic ones and determined to be 821 Ω− 1 cm− 1, which
agrees to the theoretical prediction of 842 Ω− 1 cm− 1 and is considerably smaller than 1100
Ω− 1 cm− 1 for Fe (001). This result provides a direct experimental evidence for the
anisotropy of the intrinsic AHE in single crystal Fe, reflecting its electronic band structure.
The anomalous Hall effect (AHE) in epitaxial Fe films on GaAs(111) has been investigated as a function of film thickness and temperature. The intrinsic contribution from the Berry curvature is singled out from the extrinsic ones and determined to be 821 cm, which agrees to the theoretical prediction of 842 cm and is considerably smaller than 1100 cm for Fe(001). This result provides a direct experimental evidence for the anisotropy of the intrinsic AHE in single crystal Fe, reflecting its electronic band structure.
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