The indium nano-contacts are epitaxially grown on a two-dimensional surface of high-
resistivity, n-type Cd 0.9 Zn 0.1 Te in ultra-high vacuum. The scaling effect in these contacts
is systematic, but not linear. It is shown that the contacts exhibit a profoundly asymmetric
behavior. It is argued that the “rectifying” behavior of these contacts is due to tunneling and
that the tunneling does not necessarily imply Schottky nature.